Novel Precursors for SiCH Low-k Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
Novel Precursors for SiCH Low-k Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
复制标题
超过 22 nm 节点的 SiCH 低 k 帽的新型前体：硅杂环戊烷前体在等离子体增强化学气相沉积过程中的反应以及 SiCH 薄膜的结构分析
DOI：
10.1143/jjap.50.08ka01
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Y. Shimogaki
中科院分区：
文献类型：
--
作者：
H. Shimizu;N. Tajima;T. Kada;S. Nagano;Y. Shimogaki
为了利用等离子体增强化学气相沉积（PECVD）技术制备高碳含量的SiCH薄膜，设计了1，1-二乙烯基硅杂环戊烷（DVScP）和5-硅螺[4，4]壬烷（SSN）作为Cu线顶部的低k帽层和Cu扩散阻挡层的新型前驱体。我们阐明了这些新开发的前体制成的低k SiCH膜的结构和它们对铜和氧扩散的阻挡性能之间的关系。我们还研究了SiCH的结构和不同的RF等离子体功率下的沉积过程之间的关系。采用蒙特卡罗模拟来估计使用悬垂测试结构的沉积轮廓。傅里叶变换红外光谱（FT-IR）用于分析分子结构。我们的新的硅杂环戊烷形成SiCH薄膜具有高的碳含量和良好的阻隔性能，在高RF功率，由于根据我们的量子化学计算设计的硅杂环戊烷的特定反应。因此，前体设计是形成具有高碳含量的SiCH的重要因素，其实现了较低的k和良好的阻隔性能。
To form SiCH films with high carbon content using plasma-enhanced chemical vapor deposition (PECVD), 1,1-divinylsilacyclopentane (DVScP) and 5-silaspiro[4,4]nonane (SSN) were designed as novel precursors for the low-k cap layer and Cu diffusion barrier at the top of Cu lines. We elucidated the relationship between the structure of low-k SiCH films made from these newly developed precursors and their barrier properties against copper and oxygen diffusion. We also studied the relationship between the structure of SiCH and the deposition process under various RF plasma powers. A Monte Carlo simulation was employed to estimate the deposition profile using an overhang test structure. Fourier transform infrared (FT-IR) spectroscopy was used to analyze the molecular structures. Our novel silacyclopentanes formed SiCH films with high carbon content and good barrier properties at high RF powers due to the specific reactions of silacyclopentanes designed according to our quantum chemical calculations. Precursor design is thus an important factor in forming SiCH with high carbon content that achieves both lower k and good barrier properties.