Defect-modified exchange bias
Defect-modified exchange bias
复制标题
DOI：
10.1063/1.1413731
复制
发表时间：
2001-10
影响因子：
4
通讯作者：
Joo-Von Kim;R. Stamps
中科院分区：
文献类型：
--
作者：
Joo-Von Kim;R. Stamps
利用数值模拟研究了交换偏置铁磁/反铁磁双层膜中局域缺陷的影响。发现相对于界面的缺陷的位置是决定矫顽和偏置场修改的大小的主要因素。一个结果是，某些类型的缺陷控制部分壁结构的稳定性。这可能解释了反铁磁体中部分畴壁的不可逆钉扎所引起的磁化率增强。
The influence of local defects in exchange biased ferromagnetic/antiferromagnetic bilayers is studied using numerical simulations. The location of defects relative to the interface is found to be the main factor determining the magnitude of coercive and bias field modifications. One consequence is that some types of defects control stability of partial wall structures. This may explain coercivity enhancement as arising from irreversible pinning of partial domain walls in the antiferromagnet.