Neural circuit basis of visuo-spatial working memory precision: a computational and behavioral study

Neural circuit basis of visuo-spatial working memory precision: a computational and behavioral study
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DOI:
10.1152/jn.00362.2015
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发表时间:
2015-09-01
影响因子:
2.5
通讯作者:
Compte, Albert
Compte, Albert
中科院分区:
医学3区
文献类型:
--
作者:
Almeida, Rita;Barbosa, Joao;Compte, Albert

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工作记忆(WM)中可以保留的信息量是有限的。WM容量的限制一直是激烈的研究的主题,特别是在试图指定WM的算法模型。相比之下,神经回路的观点几乎没有被用来测试WM的行为实验的限制。在这里,我们使用了视觉空间WM(vsWM)的神经元微电路模型,以调查几个项目的记忆。该模型假设,有一个地形组织的电路负责空间记忆的保留。这个假设导致了具体的预测,我们在行为实验中进行了测试。根据该模型,附近的位置应该有偏差地回忆起来,就好像两个记忆痕迹在延迟期间根据距离显示出吸引或排斥。另一个预测是,当项目之间的距离得到控制时,先前报告的记忆项目数量增加(记忆负荷)的记忆精度损失应该消失。这两种预测都得到了实验的证实。总之,我们的研究结果提供了支持的地形神经回路组织的vsWM,他们认为,类似的记忆之间的干扰的基础上的一些WM的限制,他们提出了一个基于电路的解释,调和以前的冲突结果的WM精度与负载的依赖。
The amount of information that can be retained in working memory (WM) is limited. Limitations of WM capacity have been the subject of intense research, especially in trying to specify algorithmic models for WM. Comparatively, neural circuit perspectives have barely been used to test WM limitations in behavioral experiments. Here we used a neuronal microcircuit model for visuo-spatial WM (vsWM) to investigate memory of several items. The model assumes that there is a topographic organization of the circuit responsible for spatial memory retention. This assumption leads to specific predictions, which we tested in behavioral experiments. According to the model, nearby locations should be recalled with a bias, as if the two memory traces showed attraction or repulsion during the delay period depending on distance. Another prediction is that the previously reported loss of memory precision for an increasing number of memory items (memory load) should vanish when the distances between items are controlled for. Both predictions were confirmed experimentally. Taken together, our findings provide support for a topographic neural circuit organization of vsWM, they suggest that interference between similar memories underlies some WM limitations, and they put forward a circuit-based explanation that reconciles previous conflicting results on the dependence of WM precision with load.