Depletion-Mode Field Effect Semiconductor Sensor with Cation-Sensitive Polymer Membranes
Depletion-Mode Field Effect Semiconductor Sensor with Cation-Sensitive Polymer Membranes
复制标题
具有阳离子敏感聚合物膜的耗尽型场效应半导体传感器
DOI：
10.1246/bcsj.61.1175
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Tadashi Watanabe
中科院分区：
文献类型：
--
作者：
Y. Okawa;M. Sukigara;S. Yoshida;Tadashi Watanabe
Semiconductor ion sensors based on the surface conductance change due to a variation in the depletion layer thickness have been constructed. An n-SnO2 electrode was coupled with four kinds of cation-sensitive polymer membranes (Fe3+- and Cu2+-exchanged Nafion membranes and poly(vinyl chloride)-supported dioctyl phthalate membranes containing a neutral carrier, valinomycin or nonactin), and its surface conductance was measured under depletion conditions as a function of the cation concentration. The sensor exhibited sensitivity to Fe3+, Cu2+, K+, or NH4+ at levels higher than 10−4 mol dm−3 within 10 s. The sensor response was analyzed in terms of (1) the dependence of the surface conductance on the surface band bending and (2) the potential difference at solution/membrane interfaces. From the analysis, it is confirmed that the membranes show nearly Nernstian behavior and that the semiconductor acts as a potentiometric transducer. The applicability of the depletion-mode semiconductor sensor is discussed.
