Formation of β-FeSi 2 Layers on Si(001) Substrates
Formation of β-FeSi 2 Layers on Si(001) Substrates
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在 Si(001) 衬底上形成 β-FeSi 2 层
DOI：
10.1143/jjap.36.3620
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发表时间：
1997
影响因子：
1.5
通讯作者：
F. Hasegawa
中科院分区：
文献类型：
--
作者：
Masaya Tanaka;Y. Kumagai;T. Suemasu;F. Hasegawa
研究了在不同生长条件下，用热反应和反应沉积外延两种方法在Si衬底上生长的β-FeSi2的晶体质量。与热反应法制备的β-FeSi2相比，RDE法制备的FeSi2的晶体质量有所提高。在RDE法中，Fe沉积速率和生长温度都影响β-FeSi2的晶体质量。在不同的生长温度和沉积速率下，分别在470℃和0.1A/S的条件下形成了高度(100)择优取向的β-FeSi2外延。室温下吸收系数的测量表明，β-FeSi2的直接禁带宽度约为0.83eV。
The crystal quality of β-FeSi2 formed on Si(001) by both the thermal reaction method and reactive deposition epitaxy (RDE) was investigated under various growth conditions. Compared with the thermal reaction method, the crystal quality of β-FeSi2 formed by RDE was improved. In the RDE method, the Fe deposition rate as well as the growth temperature influenced the crystal quality of β-FeSi2. Among various growth temperatures and deposition rates of Fe, highly (100)-oriented epitaxial β-FeSi2 was formed by RDE at 470°C and 0.1 A/s, respectively. Measurements of the absorption coefficient at room temperature (RT) indicate that β-FeSi2 has a direct band gap of about 0.83 eV.