Vertical MOS technology with sub-0.1 /spl mu/m channel lengths
Vertical MOS technology with sub-0.1 /spl mu/m channel lengths
复制标题
沟道长度低于 0.1 /spl mu/m 的垂直 MOS 技术
DOI：
10.1049/el:19950890
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发表时间：
1995
影响因子：
1.1
通讯作者：
D. Behammer
中科院分区：
文献类型：
--
作者：
H. Gossner;F. Wittmann;I. Eisele;T. Grabolla;D. Behammer
采用分子束外延技术制备了沟道长度为85 nm的垂直MOSFET。与以前的工作相比，电气行为有了很大的改善，允许使用标准的模拟工具来分析的I-V特性。从实验和理论结果，我们得出结论，对于垂直MOSFET，有用的最小沟道长度不受技术约束，但由物理限制的电气性能。有用的最小沟道长度估计为80 nm。
A vertical MOSFET with a channel length of 85 nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical behaviour has been greatly improved, allowing the use of standard simulation tools for analysing the I-V characteristics. From experimental and theoretical results, we conclude that for vertical MOSFETs, the useful minimum channel length is not limited by the technological constraints but by the physical limits of the electrical performance. The useful minimum channel length is estimated to be 80 nm.