Dispersive resonance bands within the space charge layer of metal- semiconductor junction
Dispersive resonance bands within the space charge layer of metal- semiconductor junction
复制标题
金属-半导体结空间电荷层内的色散共振带
DOI：
10.1103/physrevb.81.245406
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
C. Mou
中科院分区：
文献类型：
--
作者：
S. Tang;Tay;Chien;Chang;Cheng;K. Tsuei;H. Jeng;C. Mou
基于角分辨光电子能谱的测量，我们报道了在Pb/Ge（111）-x3 R30结构中，除了类似Ge重空穴（HH）、轻空穴（LH）和分裂带（SO）的三个带外，在表面带中心附近还发现了类似非分裂带（NSO）的第四个色散带.由于Pb和Ge之间的强耦合，三个Ge体状能带发生畸变，而当Pb的厚度增大时，NSO状能带变弱并消失，结合从头算计算，表明其在空间电荷层内的局域性质。我们的研究结果显然是重要的设计涉及金属半导体接触的电子产品。
Based on measurements of angle resolved photoemission, we report that in the Pb/Ge(111)- \sqrt{3}x\sqrt{3} R30^\circ structure, in addition to three bands resembling Ge heavy hole (HH), light hole (LH), and split off (SO) bulk band edges, a fourth dispersive band resembling the non split off (NSO) band is found near the surface zone center. While three Ge bulk-like bands get distorted due to strong coupling between Pb and Ge, the NSO-like band gets weaker and disappears for larger thickness of Pb, which, when combined with ab initio calculations, indicates its localized nature within space charge layer. Our results are clearly important for designing electronics involved with metal-semiconductor contacts.
致密 Pb/Ge(111)-√<3>×√<3>表面不存在电荷密度波
DOI：
--
发表时间：
2008
期刊：
Physical Review B 72
影响因子：
--
作者：
H. Morikawa;I. Matsuda;and S. Hasegawa
通讯作者：
and S. Hasegawa