ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
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DOI：
10.1109/led.2016.2540164
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发表时间：
2016-05-01
影响因子：
4.9
通讯作者：
Delage, S. L.
中科院分区：
文献类型：
--
作者：
Aubry, R.;Jacquet, J. C.;Delage, S. L.
在3“碳化硅衬底上MOCVD生长的InAlGaN/AlN/GaN四元异质结上制备了高频金属绝缘半导体高电子迁移率晶体管(MISHEMT)。对SiN-ICPCVD钝化层进行了具体的研究。优化后的器件在30 GHz下获得了改善的性能：输出功率为6W/mm，功率附加效率为42%。这些晶体管还获得了高于450ms/mm的良好的外跨导值和高达1.55A/mm的电流密度。
High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3" SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors.