Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi‐layer precursor method: its photovoltaic performance and deep‐level defects

Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi‐layer precursor method: its photovoltaic performance and deep‐level defects
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DOI:
10.1002/pip.2748
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发表时间:
2016-07
期刊:
Progress in Photovoltaics: Research and Applications
影响因子:
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通讯作者:
Jakapan Chantana;Daisuke Hironiwa;Taichi Watanabe;Seiki Teraji;T. Minemoto
Jakapan Chantana;Daisuke Hironiwa;Taichi Watanabe;Seiki Teraji;T. Minemoto
中科院分区:
其他
文献类型:
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作者:
Jakapan Chantana;Daisuke Hironiwa;Taichi Watanabe;Seiki Teraji;T. Minemoto

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采用所谓的“多层前体法”,在钠石灰玻璃和不锈钢(SUS)衬底上制备了几种[Ga]/([Ga] + [In])、GGI和Fe浓度的Cu(In,Ga)Se2 (CIGS)薄膜。从光学深能级瞬态光谱中,观察到深能级缺陷位于距价带最大值(eV) 0.8 eV处。当GGI大于0.4时,该缺陷成为重组中心,从而降低细胞性能。此外,在距离eV 0.45 eV处,在SUS衬底上的CIGS薄膜中检测到Fe相关的深能级缺陷。其密度与CIGS膜中的Fe浓度一致。SCAPS模拟和实验结果表明,当GGI大于0.4时,高于阈值(1.0 × 1016原子/cm3)的Fe浓度会降低载流子寿命和载流子密度,对电池性能的影响更大。另一方面,低于阈值(1.0 × 1016原子/cm3)的铁浓度对电池性能没有不利影响。换句话说,转换效率(η)变化不大,在2%以下。将Fe浓度降低到约5.2 × 1016原子/cm3,制备出了η值为17.5%的su衬底CIGS太阳能电池。版权所有©2016 John Wiley & Sons, Ltd。
Cu(In,Ga)Se2 (CIGS) films on soda‐lime glass and stainless steel (SUS) substrates with several [Ga]/([Ga] + [In]), GGI, and Fe concentrations are fabricated by so‐called “multi‐layer precursor method”. From optical deep‐level transient spectroscopy, deep‐level defect located at 0.8 eV from valence band maximum (EV) is observed. This defect becomes recombination center when GGI is over 0.4, thereby decreasing cell performances. Fe‐related deep‐level defect is moreover detected in CIGS film on SUS substrate situated at 0.45 eV from EV. Its density is consistent with Fe concentration in CIGS films. According to SCAPS simulation and experimental results, Fe concentration of above threshold (1.0 × 1016 atom/cm3) decreases carrier lifetime and carrier density and has more harmful influence on cell performances with GGI of above 0.4. On the other hand, Fe concentration of below threshold (1.0 × 1016 atom/cm3) has no detrimental impact on cell performances. Namely, conversion efficiency (η) is slightly changed by below 2%. CIGS solar cell on SUS substrate with η of 17.5% is fabricated by decreasing Fe concentration to approximately 5.2 × 1016 atom/cm3 although higher than the threshold value. Copyright © 2016 John Wiley & Sons, Ltd.