Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi‐layer precursor method: its photovoltaic performance and deep‐level defects
Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi‐layer precursor method: its photovoltaic performance and deep‐level defects
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DOI:
10.1002/pip.2748
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发表时间:
2016-07
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影响因子:
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通讯作者:
Jakapan Chantana;Daisuke Hironiwa;Taichi Watanabe;Seiki Teraji;T. Minemoto
中科院分区:
文献类型:
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作者:
Jakapan Chantana;Daisuke Hironiwa;Taichi Watanabe;Seiki Teraji;T. Minemoto
Cu(In,Ga)Se2 (CIGS) films on soda‐lime glass and stainless steel (SUS) substrates with several [Ga]/([Ga] + [In]), GGI, and Fe concentrations are fabricated by so‐called “multi‐layer precursor method”. From optical deep‐level transient spectroscopy, deep‐level defect located at 0.8 eV from valence band maximum (EV) is observed. This defect becomes recombination center when GGI is over 0.4, thereby decreasing cell performances. Fe‐related deep‐level defect is moreover detected in CIGS film on SUS substrate situated at 0.45 eV from EV. Its density is consistent with Fe concentration in CIGS films. According to SCAPS simulation and experimental results, Fe concentration of above threshold (1.0 × 1016 atom/cm3) decreases carrier lifetime and carrier density and has more harmful influence on cell performances with GGI of above 0.4. On the other hand, Fe concentration of below threshold (1.0 × 1016 atom/cm3) has no detrimental impact on cell performances. Namely, conversion efficiency (η) is slightly changed by below 2%. CIGS solar cell on SUS substrate with η of 17.5% is fabricated by decreasing Fe concentration to approximately 5.2 × 1016 atom/cm3 although higher than the threshold value. Copyright © 2016 John Wiley & Sons, Ltd.