Ultra-Fast Anisotropic Silicon Etching with Resulting Mirror Surfaces in Ammonia Solutions
Ultra-Fast Anisotropic Silicon Etching with Resulting Mirror Surfaces in Ammonia Solutions
复制标题
在氨溶液中进行超快速各向异性硅蚀刻并产生镜面
DOI：
10.1007/978-3-642-59497-7_144
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
N. Atoda
中科院分区：
文献类型：
--
作者：
C. Mihalcea;S. Khumpuang;M. Kuwahara;Zhen Yang;R. Maeda;J. Tominaga;N. Atoda
的砷（III）盐添加氨水溶液的各向异性蚀刻性能的影响。在这里，我们证明了摄入少量的这种盐大大改变了<$100 <$-取向硅的蚀刻行为。在蚀刻过程中，元素As膜沉淀在溶解的Si表面上，并随着蚀刻的进行而浮在其上。砷化合物的真实的表面活性剂样行为导致在70 °C下的蚀刻速率高达95µm/h。此外，蚀刻的表面看起来像是肉眼的镜面，并且显示出低于5 nm的均方根粗糙度，如AFM测量所证实的。
The effect of an arsenic (III) salt addition on the anisotropic etching performance of aqueous ammonia solutions is presented. Here we demonstrate that the intake of small amounts of this salt considerably alters the etching behavior of ‹100›-oriented silicon. During the etching process, an elementary As-film precipitates at the dissolving Si-surface and floats on it as etching proceeds. The real surfactant like behavior of the arsenic compound results in etch rates as high as 95µm/h at 70 °C. In addition, the etched surface appears mirror like to the naked eye and shows a rms-roughness below 5 nm as confirmed by AFM measurements.