Instability of crystal/melt interface including twin boundaries of silicon
Instability of crystal/melt interface including twin boundaries of silicon
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DOI：
10.1063/1.4876177
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发表时间：
2014-05
影响因子：
4
通讯作者：
K. Fujiwara;M. Tokairin;W. Pan;H. Koizumi;J. Nozawa;S. Uda
中科院分区：
文献类型：
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作者：
K. Fujiwara;M. Tokairin;W. Pan;H. Koizumi;J. Nozawa;S. Uda
用原位观察技术研究了含孪晶界和无孪晶界的硅单晶/熔体界面的不稳定性。研究发现，在平晶/熔体界面上的孪晶界面处，这种不稳定性得到了促进。我们证明了Mullins和Sekerka理论不适用于含有孪晶界的界面，而它可以适用于不含孪晶界的界面。结果表明，即使在正的温度梯度下，这种不稳定性也会发生，并且对于含有孪晶界的界面，扰动的波长由孪晶间距决定。
The instability of crystal/melt interfaces including twin boundaries and no twin boundaries of silicon were studied using in situ observation technique. It was found that the instability is promoted at the twin boundaries on the flat crystal/melt interface. We showed that the Mullins and Sekerka theory cannot apply to an interface including twin boundaries, while it can apply to an interface including no twin boundaries. It was shown that the instability occurs even in a positive temperature gradient and the wavelength of the perturbation is determined by the twin spacing in the case of an interface including twin boundaries.