Nanocluster dynamics in fast rate epitaxy under mesoplasma condition
Nanocluster dynamics in fast rate epitaxy under mesoplasma condition
复制标题
DOI：
10.1016/j.cplett.2013.02.005
复制
发表时间：
2013-03-28
影响因子：
2.8
通讯作者：
Yoshida, T.
中科院分区：
文献类型：
--
作者：
Chen, L. W.;Shibuta, Y.;Yoshida, T.
用分子动力学方法研究了硅纳米团簇在外延生长过程中的动力学行为。发现在快速冷却过程中形成的几个纳米尺寸的硅团簇在撞击到Si(100)衬底时瞬间变形，同时原子结构与衬底的原子结构自发有序化。由于高能原子在表面的比例增加，即使在较低的温度下，较小的团簇(类似于1 nm)也有利于这种变形。这就是松散束缚团簇作为生长前驱体，以较低的碰撞能获得外延的优点。皇冠版权所有(C)2013由爱思唯尔B.V.出版。保留所有权利。
The dynamics of Si nano-clusters during epitaxial growth has been investigated with molecular dynamics simulation using the Tersoff potential. Several nm sized Si cluster formed during rapid cooling was found to deform instantaneously upon impingement on a Si(100) substrate at the same time with the spontaneous ordering of the atomic structure to that of the substrate. Due to the increased fraction of high-energy atoms at the surface, smaller clusters (similar to 1 nm) are favorable for such a deformation even at lower temperatures. This is the advantage of loosely-bound cluster as growth precursor to attain epitaxy with reduced impact energies. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.