Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral- Crystallization
Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral- Crystallization
复制标题
通过快速熔化横向结晶实现绝缘体上 Ge 条带中两个生长前沿的原子相干聚结
DOI：
10.1149/2.005303jss
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发表时间：
2013
影响因子：
2.2
通讯作者：
and M. Miyao
中科院分区：
文献类型：
--
作者：
M. Kurosawa;K. Toko;T. Sadoh;I. Mizushima;and M. Miyao
高质量绝缘体锗（GOI）是在硅平台上集成高速晶体管、光学器件和自旋电子器件的关键结构。研究了快速熔化横向结晶过程中两个生长锋的结合对goi条纹结晶度的影响及其与生长距离的关系。当生长距离较长（≥150 μm）时，由于生长前沿倾斜，晶界在合并区域形成（1-3）。另一方面，在短距离（≤5 μm）下，晶格结构在没有应变的情况下一致排列。此外，在中间距离（5-150 μm）下，生长前沿的晶格结构一致排列，没有任何缺陷，但由于生长前沿的轻微倾斜（~ 0.5），局部诱导了非均质晶格应变。这种生长距离< 150 μm的原子相干聚结显示了快速熔化结晶技术比蒸汽和固相技术的显著优势。
High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical-and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (≥ 150 μm), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3). On the other hand, for short distance (≤ 5 μm), lattice-structures coherently align without strains. Moreover, for intermediate distance (5–150 μm), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (∼ 0.5). Such atomically-coherent-coalescence for growth-distance< 150 μm shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.