Grain Engineering of Sb 2 S 3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage
Grain Engineering of Sb 2 S 3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage
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Sb 2 S 3 薄膜的晶粒工程可实现具有高开路电压的高效平面太阳能电池
DOI：
10.1002/adma.202305841
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发表时间：
2023
影响因子：
29.4
通讯作者：
Liu X
中科院分区：
文献类型：
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作者：
Liu X
Sb2S3是一种很有前途的高性能太阳能电池环境友好型半导体材料。但是，像许多其他多晶材料一样，Sb2S3受到非辐射复合和晶界载流子散射的限制。这项工作展示了如何在Sb_2S_3沉积的前驱体溶液中加入适量的Ce~(3+)，将Sb_2S_3薄膜中的GB密度从1068±0.40℃显著降低到327±0.23 nm−_2。通过广泛的结构、形态和光电性质的表征，并辅之以计算，揭示了一个关键因素是在CDS/Sb2S3界面上形成了一层超薄的Ce2S3层，它可以降低界面能，增加Sb2S3与衬底之间的粘附功，从而促进Sb2S3的异质形核，并促进横向晶粒的生长。通过减少GBS和/或CDS/Sb2S3异质结界面的非辐射复合，以及改善异质结的载流子输运特性，本工作获得了高性能的Sb2S3太阳电池，其功率转换效率达到7.66%。达到了令人印象深刻的796毫伏的开路电压(VOC)，这是迄今为止报道的Sb2S3太阳能电池的最高电压。这项工作提供了一种同时调节Sb2S3吸收膜成核和生长以提高器件性能的策略。
Sb2S3is a promising environmentally friendly semiconductor for high performance solar cells. But, like many other polycrystalline materials, Sb2S3is limited by nonradiative recombination and carrier scattering by grain boundaries (GBs). This work shows how the GB density in Sb2S3films can be significantly reduced from 1068 ± 40 to 327 ± 23 nm µm−2by incorporating an appropriate amount of Ce3+into the precursor solution for Sb2S3deposition. Through extensive characterization of structural, morphological, and optoelectronic properties, complemented with computations, it is revealed that a critical factor is the formation of an ultrathin Ce2S3layer at the CdS/Sb2S3interface, which can reduce the interfacial energy and increase the adhesion work between Sb2S3and the substrate to encourage heterogeneous nucleation of Sb2S3, as well as promote lateral grain growth. Through reductions in nonradiative recombination at GBs and/or the CdS/Sb2S3heterointerface, as well as improved charge‐carrier transport properties at the heterojunction, this work achieves high performance Sb2S3solar cells with a power conversion efficiency reaching 7.66%. An impressive open‐circuit voltage (VOC) of 796 mV is achieved, which is the highest reported thus far for Sb2S3solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb2S3absorber films for enhanced device performance.