Fully Integrated Single-Chip 305-375-GHz Transceiver With On-Chip Antennas in SiGe BiCMOS
Fully Integrated Single-Chip 305-375-GHz Transceiver With On-Chip Antennas in SiGe BiCMOS
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DOI：
10.1109/tthz.2018.2823202
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发表时间：
2018-05-01
影响因子：
3.2
通讯作者：
Maurer, Linus
中科院分区：
文献类型：
--
作者：
Al-Eryani, Jidan;Knapp, Herbert;Maurer, Linus
介绍了一种具有片上天线的完全集成的单芯片收发器（TRX），用于在305至375 GHz的连续频率范围内发送和接收信号。射频（RF）和本地振荡器信号是使用宽带推挽压控振荡器，三级功率放大器和倍频器产生的。使用基波混频器的外差接收机将接收到的RF信号转换为中频（IF）信号，该中频信号驱动IF放大器。此外，还集成了一个64分频分频器，以提供低频输出用于测量目的，并允许稍后添加锁相环用于频率稳定和合成。采用f（t）/f（max）= 250 GHz/370 GHz的130 nm硅锗BiCMOS工艺。TRX芯片被引线键合到印刷电路板，并且TPX（聚甲基戊烯）透镜被放置在芯片的顶部用于聚焦辐射。在343 GHz频率下，测量结果表明，等效各向同性辐射功率为18.4 dBm，相位噪声为-79 dBc/Hz@1 MHz，中频转换增益为28 dB。所获得的调谐带宽为70 GHz，是迄今为止报道的全集成TRX的最高调谐带宽。
A fully integrated single-chip transceiver (TRX) with on-chip antennas for transmitting and receiving signals within a continues frequency range from 305 to 375 GHz is presented. The radio-frequency (RF) and local oscillator signals are generated using a wideband push-push voltage-controlled oscillator, a three-stage power amplifier, and a frequency doubler. A heterodyne receiver using a fundamental mixer converts the received RF signal to an intermediate frequency (IF) signal, which drives an IF amplifier. Additionally, a divide-by-64 frequency divider is integrated to provide a low-frequency output for measurement purposes and to enable later the addition of a phase-locked loop for frequency stabilization and synthesis. A 130-nm silicon-germanium BiCMOS process with f(t)/f(max) = 250 GHz/370 GHz is used. The TRX chip is wire bonded to a printed circuit board and a TPX (Polymethylpentene) lens is placed on top of the chip for focusing the radiation. At a frequency of 343 GHz, the measurements show an effective isotropic radiated power of 18.4 dBm, a phase noise of -79 dBc/Hz@1 MHz, and an IF conversion gain of 28 dB. The obtained tuning bandwidth of 70 GHz is the highest reported so far for fully integrated TRXs.