Thermoelectric properties of Bi1-xSnxCuSeO solid solutions
Thermoelectric properties of Bi1-xSnxCuSeO solid solutions
复制标题
Bi1-xSnxCuSeO固溶体的热电性能
DOI：
10.1039/c6dt04885d
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发表时间：
2017
影响因子：
4
通讯作者：
Liang Xin
中科院分区：
文献类型：
--
作者：
Yang Yuqing;Liu Xiaocun;Liang Xin
本文报道了通过在铋位上掺杂锡来增强p型BiCuSeO的热电性能。粉末x射线衍射分析和霍尔测量表明，所有样品中都有有效的锡掺杂。从测量的载流子浓度来看，我们发现Sn的掺杂效率低于预期。第一性原理计算表明，锡孤对在费米能级上改变了能带结构，并在电输运和塞贝克系数测量中观察到相应的效应。在773 K时，热电功率因数达到了~ 2.5 μW cm−1 K−2。Sn掺杂对热导率无显著影响；在773 K时，Bi0.9Sn0.1CuSeO的热电优值（ZT）为0.3，是原始BiCuSeO的两倍多。
We report the enhanced thermoelectric properties of p-type BiCuSeO by tin doping on bismuth sites. Powder X-ray diffraction analysis and Hall measurements indicated effective tin doping in all samples. We found that the doping efficiency of Sn is lower than expected, as seen from the measured carrier concentration. First-principles calculations indicate that the Sn lone pair modifies the band structure at the Fermi level, with the consequent effect observed in the electrical transport and Seebeck coefficient measurements. An enhanced thermoelectric power factor of ∼2.5 μW cm−1 K−2 was reached at 773 K. No significant effect of Sn doping on the thermal conductivity was found; a thermoelectric figure of merit value (ZT) of 0.3 at 773 K is achieved for Bi0.9Sn0.1CuSeO, which is more than twice that of the pristine BiCuSeO.