Random telegraph signals in a radiation-hardened CMOS active pixel sensor
Random telegraph signals in a radiation-hardened CMOS active pixel sensor
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DOI：
10.1109/tns.2002.998649
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发表时间：
2002-02-01
影响因子：
1.8
通讯作者：
Mertens, R
中科院分区：
文献类型：
--
作者：
Bogaerts, J;Dierickx, B;Mertens, R
研究了抗辐射CMOS有源像素传感器（APS）中暗电流的随机电报信号（RTS）行为。已经用不同能量和不同注量的质子辐照了几种装置。质子的能量，注量，和操作温度上的振幅，时间常数，和发生的RTS的影响进行了研究。这种行为的机制进行了讨论，并提出了一些建议，可能的缺陷类型。
The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types.