Seebeck coefficient of nanostructured phosphorus-alloyed bismuth telluride thick films
Seebeck coefficient of nanostructured phosphorus-alloyed bismuth telluride thick films
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DOI：
10.1016/j.jallcom.2008.03.088
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发表时间：
2009-03
影响因子：
6.2
通讯作者：
Jian Zhou;Shuai Li;H. Soliman;M. Toprak;M. Muhammed;D. Platzek;E. Müller
中科院分区：
文献类型：
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作者：
Jian Zhou;Shuai Li;H. Soliman;M. Toprak;M. Muhammed;D. Platzek;E. Müller
采用电化学沉积法制备了纳米结构的磷合金化Bi 2 Te 3厚膜。根据Scherrer公式计算出薄膜的平均晶粒尺寸为14- 26 nm。研究了P对Bi 2 Te 3厚膜Seebeck系数的影响。结果表明，P合金化的厚膜具有n型导电性，Seebeck系数为−35μV/K。讨论了晶体中P位占有率与Seebeck系数的关系。
Nanostructured phosphorous-alloyed Bi2Te3thick films have been prepared by electrochemical deposition. The average grain size of the films was calculated to be 14–26nm based on Scherrer's equation. The effect of P on the Seebeck coefficient of the Bi2Te3thick film was investigated. The results show that P-alloyed thick film has n-type conductivity with the Seebeck coefficient of −35μV/K. The correlation between P site occupancy in the crystal and the Seebeck coefficient was discussed.