Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing
Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing
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DOI：
10.1021/nl071626r
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发表时间：
2008-01-01
期刊：
影响因子：
10.8
通讯作者：
Javey, Ali
中科院分区：
文献类型：
--
作者：
Fan, Zhiyong;Ho, Johnny C.;Javey, Ali
具有高可扩展性的“自下而上”纳米线（NW）材料的受控且均匀的组装呈现了纳米线用于电子应用的集成所面临的重大瓶颈挑战之一。在这里，我们展示了通过简单的接触印刷工艺高度有序，密集和规则的纳米线阵列的晶圆级组装，具有高均匀性和可重复性。组装的NW节距被示出为通过接收器衬底的表面化学处理容易地调制，具有接近类似于8 Wpm的最高密度，类似于95%的定向对准，以及晶片级均匀性。通过在接触印刷过程期间施加润滑剂来实现组件中的这种精细控制，这显著地最小化了NW-NW机械相互作用，因此使得能够通过表面化学结合相互作用良好地控制纳米线的转移。此外，我们证明，我们的印刷方法，使大规模集成的NW阵列的各种设备结构上的刚性硅和柔性塑料基板，与控制的半导体沟道宽度范围从一个单一的NW（类似10纳米）到类似的250 μ m，包括一个平行阵列的1250多个NW和提供超过1毫安的导通电流。
Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability presents one of the significant bottleneck challenges facing the integration of nanowires for electronic applications. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching similar to 8 Wpm, similar to 95% directional alignment, and wafer-scale uniformity. Such fine control in the assembly is attained by applying a lubricant during the contact printing process which significantly minimizes the NW-NW mechanical interactions, therefore enabling well-controlled transfer of nanowires through surface chemical binding interactions. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both rigid silicon and flexible plastic substrates, with a controlled semiconductor channel width ranging from a single NW (similar to 10 nm) up to similar to 250 mu m, consisting of a parallel array of over 1250 NWs and delivering over 1 mA of ON current.