Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy
Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy
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DOI：
10.1063/1.122254
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发表时间：
1998-09-21
影响因子：
4
通讯作者：
Asakawa, K
中科院分区：
文献类型：
--
作者：
Ishikawa, T;Kohmoto, S;Asakawa, K
利用超高真空多腔系统，采用电子束光刻(FB)和分子束外延(MBE)相结合的方法，研究了在GaAs衬底上自组织InAs量子点的位置控制方法。采用电子束原位刻蚀和Cl2-气体刻蚀在分子束外延生长的GaAs(001)表面上刻画了小孔和浅孔。当在图案化表面施加超过1.4单分子层的InAs时，In(Ga)As点优先在孔内自组织，而孔周围的点形成被充分抑制。当我们进一步增加InAs的含量时，网点显著增大，可能是由于应力松弛效应。(C)1998年美国物理研究所。
We studied a site-control method for self-organized InAs quantum dots on GaAs substrates by a combination of in situ electron-beam (FB) lithography and molecular-beam epitaxy (MBE) using an ultrahigh-vacuum multichamber system. Small and shallow holes were patterned on a MBE-grown GaAs (001) surface by in situ EB writing and Cl-2-gas etching. When more than a 1.4 monolayer of InAs was applied to the patterned surface, In(Ga)As dots were preferentially self-organized in the holes while dot formation around the holes was sufficiently suppressed. When we further increased the amount of InAs, the dots enlarged remarkably, presumably due to a stress-relaxation effect. (C) 1998 American Institute of Physics.