An improved monolithic instrumentation amplifier

An improved monolithic instrumentation amplifier
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改进的单片仪表放大器

DOI:
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发表时间:
1975
影响因子:
5.4
通讯作者:
M. Timko
M. Timko
中科院分区:
工程技术1区
文献类型:
--
作者:
A. Brokaw;M. Timko

文献摘要

被引文献

相似文献

介绍了一种采用单片硅上薄膜双极工艺制作的仪表放大器的设计。该电路具有输入和输出过载保护、内部补偿以及改进的噪声和漂移性能。描述了一种新颖的输入输出信号耦合方法,该方法不依赖于跟踪电流源,并为除所需信号分量外的所有信号分量提供高度隔离。详细描述了电路,并概述了用于最小化热相互作用的布局技术。最后,以几个生产批次为例,报告了该电路的性能。
The design of an instrumentation amplifier fabricated using monolithic thin-film-on-silicon bipolar processing is described. The circuit features input as well as output overload protection, internal compensation, and improved noise and drift performance. A novel method of input-output signal coupling is described, which does not depend on tracking current sources, and provides a high degree of isolation for all but the desired signal components. The circuit is described in detail, and the layout techniques used to minimize thermal interaction are outlined. Finally, the performance of the circuit as typified by several production lots is reported.