Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
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DOI：
10.1126/science.aat8126
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发表时间：
2018-11-09
期刊：
影响因子：
56.9
通讯作者：
Kim, Jeehwan
中科院分区：
文献类型：
--
作者：
Shim, Jaewoo;Bae, Sang-Hoon;Kim, Jeehwan
尽管可以使用粘合式胶带去角质方法形成二维（2D）异质结构，但将2D薄片分离成单层却非常耗时，因为它是试验和错误的过程。通过直接生长控制2D层的数量也使2D材料上的核屏障较高。我们展示了一种层分辨的2D材料分裂技术，该技术允许通过分裂单个晶圆上生长的厚的2D材料的单层堆叠，从而高通量生产晶圆尺度（直径5厘米）的2D材料。通过光致发光响应和电子传导性的实质性保留，通过光涂层验证了六边形硼硼，硝酸氢硼，二硫化钨，二硫化钨，二硫化钼和脱甲酰果酱单层的均匀。我们制造了具有单原子厚度分辨率的晶圆尺度范德华异质结构，包括现场效应晶体管。
Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.