Graphitic Carbon Growth on MgO(100) by Molecular Beam Epitaxy
Graphitic Carbon Growth on MgO(100) by Molecular Beam Epitaxy
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DOI：
10.1021/jp210910u
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发表时间：
2012-03
影响因子：
3.7
通讯作者：
S. Jerng;Junsu Lee;D. Yu;Yong-Sung Kim;Junga Ryou;Suklyun Hong;C. Kim;Seokhyun Yoon;S. Chun
中科院分区：
文献类型：
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作者：
S. Jerng;Junsu Lee;D. Yu;Yong-Sung Kim;Junga Ryou;Suklyun Hong;C. Kim;Seokhyun Yoon;S. Chun
在绝缘衬底上直接生长石墨烯对于石墨烯电子学非常重要。有限的成就，通过使用分子束外延已被证明在衬底上的六方对称。为了比较和进一步的进展，我们研究了石墨碳在立方MgO衬底上的生长。拉曼光谱清楚地显示出D、G和2D峰，证实了纳米晶石墨的形成。石墨化的程度与在六方衬底上生长的碳层的石墨化程度相当。X射线光电子能谱证明了碳sp2键的主导地位，透射电子显微镜直接揭示了纳米尺度的簇。石墨碳在MgO（100）上的平坦性和均匀性也有利于含石墨碳的异质结构的潜在应用。第一性原理计算表明，强的碳-氧相互作用限制了面内相干长度。
Direct graphene growth on insulating substrates is of great importance for graphene electronics. Limited accomplishments by using molecular beam epitaxy have been demonstrated on substrates of hexagonal symmetry. For comparison and further progress, we study the growth of graphitic carbon on cubic MgO substrates. Raman spectra clearly show D, G, and 2D peaks, confirming the formation of nanocrystalline graphite. The degree of graphitization is comparable to those of carbon layers grown on hexagonal substrates. X-ray photoelectron spectroscopy proves the dominance of carbon sp2 bonding, and transmission electron microscopy reveals nanometer-scale clusters directly. The flatness and the homogeneity of graphitic carbon on MgO(100) are also beneficial to potential applications of heterostructures containing graphitic carbon. First-principles calculations elucidate that the strong carbon–oxygen interaction limits the in-plane coherence length.