How the amount of copper influences the formation and stability of defects in CdTe solar cells
How the amount of copper influences the formation and stability of defects in CdTe solar cells
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DOI：
10.1016/j.solmat.2019.110228
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发表时间：
2020-01-01
影响因子：
6.9
通讯作者：
Romeo, Alessandro
中科院分区：
文献类型：
--
作者：
Artegiani, Elisa;Major, Jonathan D.;Romeo, Alessandro
CdTe薄膜太阳能电池具有22.1%的效率记录和在产量方面的成功成果，是当今与传统硅太阳能电池竞争的技术。尽管已经应用了不同的无铜背触点，但Cu存在于所有性能最好的CdTe器件中。另一方面，众所周知，Cu在CdTe中是一个快速扩散器，它严重影响器件的劣化；因此控制其浓度是非常重要的。本文研究了铜的用量对器件性能和后触点稳定性的影响。将0.1 nm厚Cu层制备的CdTe电池与2.0、1.0和0.5 nm厚Cu层制备的器件进行了比较。铜的含量影响试样的性能和时效。此外，在老化过程中，偏压依赖性反转（开路或电流下短路的太阳能电池）发生在含有低于一定厚度的铜层的样品中，表明另一种降解机制占主导地位。
With a 22.1% efficiency record and the successful results in terms of production yield, CdTe based thin film solar cells are today a competing technology with traditional silicon solar cells. Despite different copper-free back contacts have been applied, Cu is present in all the most performing CdTe devices. On the other hand, it is well known that Cu is a fast diffuser in CdTe, and it heavily influences the devices degradation; thus controlling its concentration is very important. In this paper a study of the influence of copper quantity on the performance of the devices and stability at the back contact is presented. CdTe cells fabricated with a 0.1 nm thick Cu layer are compared to devices fabricated with 2.0, 1.0 and 0.5 nm thick Cu layers. The amount of copper affects the performance and aging of the samples. Moreover an inversion of the bias dependency (solar cells in open circuit or in short circuit under current flow), during the aging, occurs in samples containing a copper layer below a certain thickness, suggesting that another degradation mechanism predominates.