Exchange splitting and charge carrier spin polarization in EuO.
Exchange splitting and charge carrier spin polarization in EuO.
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DOI：
10.1103/physrevlett.88.047201
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发表时间：
2001-05
影响因子：
8.6
通讯作者：
P. Steeneken;L. Tjeng;I. Elfimov;G. Sawatzky;G. Ghiringhelli;N. Brookes;D. J. Huang
中科院分区：
文献类型：
--
作者：
P. Steeneken;L. Tjeng;I. Elfimov;G. Sawatzky;G. Ghiringhelli;N. Brookes;D. J. Huang
高品质的铁磁半导体EuO薄膜已经制备和研究使用一种新形式的自旋分辨光谱。我们观察到的居里和金属-绝缘体转变温度的电子结构的变化很大。我们发现这些是由铁磁态导带的交换分裂引起的，其大小高达0.6 eV。我们还提出了强有力的证据，底部的导带主要由多数自旋。这意味着EuO中的掺杂电荷载流子实际上是完全自旋极化的。
High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.