Threshold Energy Effects in Secondary Electron Emission
Threshold Energy Effects in Secondary Electron Emission
复制标题
二次电子发射的阈值能量效应
DOI：
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发表时间：
1999
影响因子：
2.8
通讯作者：
A. Howie
中科院分区：
文献类型：
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作者：
A. Howie
激发电子非弹性散射的功函数ϕ、带隙Eg、阈值能级Et和结构电离损伤开始的阈值能量转移Ed显然在各种活跃发展的热载流子成像形式中具有重要意义。这里的两个令人兴奋的例子是通过PEEM成像功函数的微小和动态的局部变化的能力，以及通过扫描电子显微镜中的SE成像绘制半导体的p型和n型区域之间的电子结构变化的能力。最近，有迹象表明，环境扫描电子显微镜中的SE信号可能对带隙的局部变化很敏感，并表明甚至有可能成像pH的空间变化。越来越清楚的是，如果要有效地探索和开发这些有吸引力的机会，就需要进行系统的、最好是定量的观察。这项工作要求样品的原子和电子结构事先完全知道，或者在显微镜中的物理过程被很好地理解的情况下，可以从其他可用的信号中推断出来。
The work function ϕ, the bandgap Eg, the threshold energy level Et, for the inelastic scattering of excited electrons and the threshold energy transfer Ed for the onset of structural ionisation damage are clearly of major significance in various actively developing forms of hot carrier imaging. Two exciting examples here are the ability to image small and dynamic local changes in work function by PEEM and as well as mapping the variations in electronic structure between p and n-type regions of a semiconductor by SE imaging in the SEM. More recently still there have been indications that the SE signal in the ESEM might be sensitive to local changes in bandgap and suggestions that it might be even possible to image spatial variations in pH. It is increasingly clear that if these attractive opportunities are to be efficiently explored and developed, systematic and preferably quantitative observations are needed. Such work requires specimens whose atomic and electronic structure is either fully known beforehand or can be deduced from other signals available in a situation where the physical processes in the microscope are well understood.