Analysis of Pressure-Induced Whisker Nucleation and Growth in Thin Sn Films
Analysis of Pressure-Induced Whisker Nucleation and Growth in Thin Sn Films
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DOI：
10.1007/s11664-021-09158-2
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发表时间：
2021-09
影响因子：
2.1
通讯作者：
Nupur Jain;Xincheng Wang;Piyush Jagtap;A. Bower;E. Chason
中科院分区：
文献类型：
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作者：
Nupur Jain;Xincheng Wang;Piyush Jagtap;A. Bower;E. Chason
最近的出版物（Jagtap et al. Scr Mat 182：43，2020）报道了在Sn薄膜的部分表面受到压力的情况下，应力驱动的晶须成核和生长的实时观察结果。本文介绍了一个模型的实验。预测的晶须体积在加载区域附近的膜是在良好的协议与实验测量。该模型还正确地预测晶须密度的变化与距离从冲头在实验结束时，但低估了晶须成核率在第一个50小时后，薄膜加载。模型预测与实验的比较为晶须生长的阈值应力提供了明确的证据，初始值为17 MPa，随着晶须长度的增加而增加，在晶须达到19 µm长度后达到饱和值22 MPa。晶须生长的影响在锡膜铜基板上进行了讨论。
A recent publication (Jagtap et al. Scr Mat 182:43, 2020) reported real-time observations of stress-driven whisker nucleation and growth in a thin film of Sn subjected to pressure on part of its surface. This paper describes a model of the experiment. Predicted whisker volume in the film adjacent to the loaded area is in good agreement with experimental measurements. The model also predicts correctly the variation of whisker density with distance from the punch at the end of the experiment but underestimates the rate of whisker nucleation during the first 50 h after the film is loaded. Comparison of model predictions with experiments provides clear evidence for a threshold stress for whisker growth, with an initial value of 17 MPa, which increases with whisker length to a saturated value of 22 MPa after whiskers reach a length of 19 µm. Implications for whisker growth in Sn films on Cu substrates are discussed.