Improvement of laser-induced surface damage in CsLiB6O10 crystal by ion etching
Improvement of laser-induced surface damage in CsLiB6O10 crystal by ion etching
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离子刻蚀改善 CsLiB6O10 晶体激光诱导表面损伤
DOI：
10.1117/12.307000
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
M. Horiguchi
中科院分区：
文献类型：
--
作者：
T. Kamimura;M. Yoshimura;T. Inoue;Y. Mori;T. Sasaki;H. Yoshida;M. Nakatsuka;K. Yoshida;K. Deki;M. Horiguchi
研究了离子刻蚀法对CsLiB6O10（CLBO）晶体表面的刻蚀工艺。通过去除亚表面包埋的抛光剂，降低了CLBO晶体表面的激光损伤，提高了晶体表面的耐久性。没有由于离子蚀刻而导致的表面退化。通过在266 nm的激光波长下的1对1测试来测量离子蚀刻对表面损伤的影响。通过Nd：YAG激光器产生的约7W的四次谐波测试CLBO晶体的耐久性。与抛光表面相比，离子刻蚀表面的耐久性提高了10倍以上。
This paper investigates ion etching process to the surface of CsLiB6O10 (CLBO) crystal. Laser-induced surface damage was reduced and surface durability of CLBO crystal was improved by removing the subsurface embedded polishing compound. There was no surface degradation as a result of the ion etching. The effects of ion etching on surface damage were measured by a 1-on-1 test at a laser wavelength of 266 nm. Durability of the CLBO crystal was tested by the approximately 7 W fourth harmonic generated by a Nd:YAG laser. The durability of the ion etched surface was improved more than 10 times as compared with the as-polished surface.