Wide-range and low supply dependency MOSFET-based temperature sensor utilizing statistical properties of scaled MOSFETs
Wide-range and low supply dependency MOSFET-based temperature sensor utilizing statistical properties of scaled MOSFETs
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DOI：
10.35848/1347-4065/acb94e
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发表时间：
2023-02
影响因子：
1.5
通讯作者：
Shinichi Ota;Mahfuzul Islam;T. Hisakado;O. Wada
中科院分区：
文献类型：
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作者：
Shinichi Ota;Mahfuzul Islam;T. Hisakado;O. Wada
我们提出了一种基于 MOSFET 的温度传感方法，能够在较宽的温度范围内进行高精度温度估计，同时具有较低的电源电压依赖性。现有的基于 MOSFET 的传感器虽然能够低功耗运行，但存在感测精度低和感测范围窄的问题。所提出的方法利用了按比例缩小的 CMOS 工艺中的每个 MOSFET 参数变化。通过测量亚阈值漏极电流的统计参数，我们可以提取互补的温度值。为了证明我们方法的可行性，我们测量了采用商用 65 nm 工艺制造的六块芯片。该方法在电源电压为 1.2 V 时，在 -20 °C 至 120 °C 的温度范围内实现了 -0.54/+0.43 °C 的传感精度。此外，该方法在 20 °C 时的最坏情况电源依赖性仅为 1.8 °C V−1。
We present a MOSFET-based temperature sensing method capable of high-accuracy temperature estimation across a wide temperature range while having a low supply voltage dependency. Existing MOSFET-based sensors, while capable of low-power operation, suffer from low sensing accuracy and a narrow sensing range. The proposed method utilizes per-MOSFET parameter variations seen in scaled CMOS processes. By measuring a statistical parameter of sub-threshold drain currents, we can extract a complimentary temperature value. To prove the feasibility of our method, we measure six chips fabricated with a commercial 65 nm process. The proposed method achieves a sensing accuracy of −0.54/ + 0.43 °C within a temperature range of −20 °C to 120 °C at a supply voltage of 1.2 V. In addition, the proposed method has a worst-case supply dependency of only 1.8 °C V−1 at 20 °C.