Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness
Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness
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DOI：
10.1109/ted.2015.2416915
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发表时间：
2015-06-01
影响因子：
3.1
通讯作者：
Dawson, Martin D.
中科院分区：
文献类型：
--
作者：
Herrnsdorf, Johannes;McKendry, Jonathan J. D.;Dawson, Martin D.
基于微型氮化镓发光二极管的显示器具有非凡的亮度。它在这里证明了在这些设备中的n-接触的布局是重要的最佳器件性能的理论和实验。我们强调，特别是，非热增加的差分电阻多像素操作的意义。这些发现支持实现具有10（6）cd/m2亮度的蓝色微显示器。
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10(6) cd/m(2).