Polysilicon Nano-film Piezoresistive Pressure Sensor
Polysilicon Nano-film Piezoresistive Pressure Sensor
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发表时间：
2009
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通讯作者：
Zhang Da
中科院分区：
文献类型：
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作者：
Zhang Da
多晶硅纳米薄膜具有良好的应变敏感性和稳定的温度特性。为了应用这些特性，介绍了一种多晶硅纳米薄膜压阻式压力传感器的设计方法。根据多晶硅纳米薄膜的压阻特性和硅杯刻蚀工艺条件，设计了弹性膜结构。然后利用有限元分析方法对薄膜的尺寸和应变电阻的分布进行了优化。在此基础上，采用传统的半导体工艺制作了压力传感器芯片。测试数据表明，该芯片具有良好的温度和灵敏度。
Polysilicon nano-films have advantage strain sensitivity and stable temperature characteristic.In order to apply these characteristic,this paper introduced a method of designing a polysilicon nano-film piezoresistive pressure sensor.According to polysilicon nano-films piezoresistive characteristic and conditions of etch technologies for the silicon cup,the elastic membrane structure was designed.Then dimensions of the membrane and distribution of strain resistors were optimized by finite-element analysis method.Based on the design,the chip of pressure sensor was fabricated using conventional semiconductor techniques.The test data show that the chips possess excellent temperature and sensitivity.