Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown InxGa
Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown InxGa
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应变分子束外延生长 InxGa 中带边偏移的光致发光和光电导测量
DOI：
10.1103/physrevb.37.4032
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Vallin
中科院分区：
文献类型：
--
作者：
Andersson;Chen;Kulakovskii;Uddin;Vallin
在GaAs（001）衬底上用分子束外延生长的In xGa 1− xAs/GaAs（x≤ 1）应变量子威尔斯阱的光致发光和光电导谱中观察到了结构。能量大于In x Ga 1− x As能隙的光谱特征被解释为In x Ga 1− x As中电子和空穴子带（包括应变分裂价带）之间的允许激子跃迁。用导带偏移和In x Ga 1− x As的能隙作为可调参数对光谱进行了分析。在厚度小于临界厚度的量子威尔斯阱中没有观察到应变弛豫。In x Ga 1− x As中的应变分裂价带低于未应变GaAs的价带。导带偏移与能隙不连续性的比率被确定为0.83±0.06。
Structure has been observed in the photoluminescence and photoconductivity spectra of In x Ga 1− x As/GaAs (x≤ 1) strained quantum wells grown by molecular-beam epitaxy onto GaAs (001)-oriented substrates. Features in the spectra at energies larger than the energy gap of In x Ga 1− x As are interpreted as the allowed excitonic transitions between electron and hole subbands (including the strain-split-off valence band) in In x Ga 1− x As. The spectra were analyzed with the conduction-band offset and the energy gap of In x Ga 1− x As as adjustable parameters. No strain relaxation in quantum wells with thickness smaller than the critical one was observed. The strain-split-off valence subband in In x Ga 1− x As is found to be below the valence band of unstrained GaAs. The ratio of the conduction-band offset to the energy-gap discontinuity was determined to be 0.83±0.06.