Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (∼200 µW) Using Offset-Fed Slot Antenna and High Current Density
Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (∼200 µW) Using Offset-Fed Slot Antenna and High Current Density
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DOI：
10.1143/apex.3.014001
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发表时间：
2009
影响因子：
2.3
通讯作者：
Kensuke Hinata;M. Shiraishi;S. Suzuki;M. Asada;H. Sugiyama;H. Yokoyama
中科院分区：
文献类型：
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作者：
Kensuke Hinata;M. Shiraishi;S. Suzuki;M. Asada;H. Sugiyama;H. Yokoyama
We demonstrate the operation of resonant tunneling diode (RTD) oscillators with high output power (100–200 µW) at frequencies of 430–460 GHz using an offset-fed slot antenna in which the RTD is placed at a certain distance from the center of the slot. The highest output power obtained in this study was 200 µW at 443 GHz for a single RTD with a peak current density of 18 mA/µm2; the RTD was placed 45 µm from the center of a 100-µm-long antenna. Higher output is expected by optimizing the position and mesa area of the RTD and the antenna length.
