Effect of excess Bi on the structure and electrical properties of CaBi2Nb2O9 ultrahigh temperature piezoceramics
Effect of excess Bi on the structure and electrical properties of CaBi2Nb2O9 ultrahigh temperature piezoceramics
复制标题
过量Bi对CaBi2Nb2O9超高温压电陶瓷结构和电性能的影响
DOI：
10.1007/s10854-018-8778-9
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发表时间：
2018-05-01
影响因子：
2.8
通讯作者：
Li, Yue-Ming
中科院分区：
文献类型：
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作者：
Qin, Chen;Shen, Zong-Yang;Li, Yue-Ming
采用固相反应法制备了具有铋层状结构的CaBi₂Nb₂O₉ + x wt% Bi₂O₃（x = 0，1，2，3）陶瓷。研究了过量铋对陶瓷晶体结构、微观结构和电学性能的影响。在所有成分中，均形成了正交对称的铋层状结构，无二次相。过量的铋使晶粒更加均匀。Bi₂O₃过量1 wt%的陶瓷表现出最佳的电学性能：压电常数d₍₃₃₎ = 6.4 pC/N，平面机电耦合系数k₍ₚ₎ = 11.0%，介电常数 = 93.5，介电损耗tanδ = 0.24%，电阻率ρ = 2.9×10⁶Ω·cm（在500℃时）。这种陶瓷还具有超高的居里温度T₍ₑ₎ = 940℃，表明其在高温传感器和执行器方面具有潜在应用。
CaBi2Nb2O9 + x wt% Bi2O3 (x = 0, 1, 2, 3) ceramics with bismuth layer structure were prepared by solid state reaction route. The effect of excess bismuth on the crystal structure, microstructure and electrical properties of the ceramics was investigated. At all compositions, orthorhombic symmetric bismuth layer structure was formed without secondary phases. Excess bismuth caused more uniform grains. The ceramic with excess Bi2O3 of 1 wt% exhibited optimal electrical properties as follows: piezoelectric constant d (33) = 6.4 pC/N, planar electromechanical coupling coefficient k (p) = 11.0%, dielectric constant = 93.5, dielectric loss tan delta = 0.24%, and resistivity rho = 2.9 x 10(6) a"broken vertical bar cm (@ 500 A degrees C). This ceramic also possess ultrahigh Curie temperature T (c) = 940 A degrees C, indicating its potential application for high temperature sensors and actuators.