Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate
Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate
复制标题
DOI：
10.1063/1.3324704
复制
发表时间：
2010-02
影响因子：
4
通讯作者：
M. Despeisse;G. Bugnon;A. Feltrin;M. Stueckelberger;P. Cuony;F. Meillaud;A. Billet;C. Ballif
中科院分区：
文献类型：
--
作者：
M. Despeisse;G. Bugnon;A. Feltrin;M. Stueckelberger;P. Cuony;F. Meillaud;A. Billet;C. Ballif
薄膜硅太阳能电池在高度纹理化的基板上的沉积导致电池中的光捕获改善。然而，粗糙衬底上硅层的生长通常会导致不期望的电流消耗，从而降低电池的性能和可靠性。我们表明，在这种情况下，使用的有源区和背接触的电池之间的氧化硅夹层允许改善电性能。沉积在高度纹理化衬底上的非晶硅电池显示出填充因子相对增加高达7.5%和转换效率相对增加6.8%，同时提高了产量和低照度性能。
The deposition of thin-film silicon solar cells on highly textured substrates results in improved light trapping in the cell. However, the growth of silicon layers on rough substrates can often lead to undesired current drains, degrading performance and reliability of the cells. We show that the use of a silicon oxide interlayer between the active area and the back contact of the cell permits in such cases to improve the electrical properties. Relative increases of up to 7.5% of fill factor and of 6.8% of conversion efficiency are shown for amorphous silicon cells deposited on highly textured substrates, together with improved yield and low-illumination performance.