Thermal and Surface Evaluation on The Process of Forming a Cu2O/CuO Semiconductor Photocatalyst on a Thin Copper Plate
Thermal and Surface Evaluation on The Process of Forming a Cu2O/CuO Semiconductor Photocatalyst on a Thin Copper Plate
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在薄铜板上形成 Cu2O/CuO 半导体光催化剂的热和表面评估
DOI：
10.1088/1757-899x/335/1/012039
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
J. Efendi
中科院分区：
文献类型：
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作者：
R. Zainul;B. Oktavia;I. Dewata;J. Efendi
本研究旨在研究通过锻烧铜板的过程形成多尺度氧化铜半导体（CuO/Cu2O）的过程。对氧化物形成过程中发生的变化进行热评估和表面评估。使用差热分析（DTA）进行评估，通过铜板在380°C温度下发生的表面变化获得结果。在380℃的温度下进行1小时的氧化物形成的煅烧。通过使用扫描电子显微镜 (SEM) 表面和横截面进行表面评估，以确定铜板上氧化物形成的扩散情况。通过XRF和XRD监测材料成分，以解释加热过程中形成的氧化铜板的结构和物理变化过程。所用铜板的厚度为200-250μm。 SEM分析结果显示，氧原子中断区域在20-30μm范围内，并且在热氧化过程中扩散得更深。氧原子的最大扩散深度达到129μm。
This research aims to investigate the process of forming a multi-scale copper oxide semiconductor (CuO/Cu2O) through a process of calcining a copper plate. The changes that occur during the formation of the oxide are thermally and surface evaluated. Evaluation using Differential Thermal Analysis (DTA) obtained by surface change of copper plate happened at temperature 380°C. Calcination of oxide formation was carried out at temperature 380°C for 1 hour. Surface evaluation process by using Scanning Electron Microscope (SEM) surface and cross-section, to determine diffusion of oxide formation on copper plate. The material composition is monitored by XRF and XRD to explain the process of structural and physical changes of the copper oxide plate formed during the heating process. The thickness of Cu plates used is 200-250 μm. SEM analysis results, the oxygen atom interruption region is in the range of 20-30 μm, and diffuses deeper during thermal oxidation process. The maximum diffusion depth of oxygen atoms reaches 129 μm.