Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
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0.5° 错误取向 (111)B 衬底上分子束外延生长的量子阱激光器阈值电流密度的降低
DOI：
10.1143/jjap.26.l302
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发表时间：
1987
影响因子：
1.5
通讯作者：
T. Hijikata
中科院分区：
文献类型：
--
作者：
T. Hayakawa;M. Kondo;T. Suyama;Kōsei Takahashi;S. Yamamoto;T. Hijikata
采用分子束外延技术在取向差为0.5°的（111）B衬底上生长了具有极低阈值电流密度（Jth）的GaAs/AlGaAs渐变折射率、分别限制异质结量子阱激光器。与（100）取向的器件相比，这些激光器的J_（th）降低了20 A/cm ~ 2，这是由于沿着方向量子化的结果<111>。对于490 µm长的器件，最小Jth为158 A/cm 2。
GaAs/AlGaAs graded-index, separate confinement heterostructure quantum-well lasers with an extremely low threshold current density (Jth) were grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates. The Jth of these lasers was reduced by 20 A/cm2 compared with that of (100)-oriented devices, which results from the quantization along the <111> direction. The minimum Jth of 158 A/cm2 was achieved for a 490 µm long device.