MORPHOLOGICAL DEFECTS ON BE-DOPED ALGAAS LAYERS GROWN BY MBE
MORPHOLOGICAL DEFECTS ON BE-DOPED ALGAAS LAYERS GROWN BY MBE
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DOI：
10.1016/0022-0248(91)90419-6
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发表时间：
1991-12-01
影响因子：
1.8
通讯作者：
LOUR, WS
中科院分区：
文献类型：
--
作者：
LIU, WC;GUO, DF;LOUR, WS
使用两种不同的 As 分压控制方法，即热电偶 (TC) 和裸离子规 (NIG) 方法，研究了 MBE 生长的 Be 掺杂 AlGaAs 层的主表面形态（椭圆形缺陷）。 观察到的缺陷密度已被研究为生长参数的系统函数，包括掺杂浓度、衬底温度、生长速率、外延层厚度和砷分压。 突起引起的椭圆形缺陷是在 MBE 生长过程中形成的。 我们的系统中产生椭圆形缺陷的主要原因被认为是非挥发性 III2O3 氧化物的存在。 然而，通过优化生长参数并仔细注意衬底制备和真空条件，获得了小于 600 cm-2 的椭圆形缺陷密度。
The primary surface morphology, oval defects, of MBE-grown Be-doped AlGaAs layers has been studied using two different As partial pressure control methods, i.e., thermocouple (TC) and nude ion gauge (NIG) methods. The observed defect density has been studied as a systematic function of growth parameters, including doping concentration, substrate temperature, growth rate, epilayer thickness, and As partial pressure. The protrusion-induced oval defects were formed during MBE growth. The primary origin of the oval defects generated in our system is believed to be the presence of non-volatile III2O3 oxide. However, an oval defect density less than 600 cm-2 has been obtained through optimization of the growth parameters, and after paying careful attention to substrate preparation and vacuum conditions.