Effect of device structure on the resistive switching characteristics of organic polymers fabricated through all printed technology
Effect of device structure on the resistive switching characteristics of organic polymers fabricated through all printed technology
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DOI：
10.1016/j.cap.2017.01.023
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发表时间：
2017-04-01
影响因子：
2.4
通讯作者：
Choi, Kyung Hyun
中科院分区：
文献类型：
--
作者：
Rehman, Muhammad Muqeet;Yang, Bong-Su;Choi, Kyung Hyun
有机双稳态非易失性存储器件的发展表明，有机材料由于其低成本、高灵活性和大的可扩展性而成为下一代电存储单元的关键。本研究透过观察改变元件结构对其开关特性的影响，描绘出有机记忆元件的一个重要方面。利用两种有机高分子材料MEH：PPV和PMMA，采用全印刷技术制备了具有双层和体异质结结构的存储器件。选择银（Ag）作为顶部和底部电极，因为其高导电性和易于加工。虽然在两种器件结构中使用了相同的聚合物，但有趣的是，结构的变化引起了性能的变化。据观察，双层结构具有更高的开关比和稳定性，对各种偏压循环相比，其体异质结对应。双层结构的上级开关特性是由于两种聚合物之间存在明确的界面。体异质结器件的缺点是在两种聚合物之间的单个有机层中存在相分离。(C)2017爱思唯尔B.V.保留所有权利。
Developments in organic bi-stable non-volatile memory devices have shown that organic materials are essential for the next generation of electrical memory unit owing to their low cost, high flexibility and large scalability. This study depicts an important aspect of organic memory devices by observing the effect of changing device structure on its switching characteristics. Memory devices with a bilayer and bulk-heterojunction structure were fabricated through an all printed technology by utilizing two organic polymers such as MEH: PPV and PMMA. Silver (Ag) was selected as the top and bottom electrode due to its high conductivity and easy processing. Though identical polymers were used in both device structures, but interestingly change in structure caused change in properties. It was observed that bilayer structure had much higher switching ratio and stability against various biasing cycles as compared to its bulk-heterojunction counterpart. Superior switching characteristics of bilayer structure were due to the presence of a well-defined interface between both polymers. Bulk-heterojunction device suffers the drawback of phase separation in a single organic layer between the two polymers. (C) 2017 Elsevier B.V. All rights reserved.