Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method
Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method
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DOI：
10.1021/jp908381b
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发表时间：
2009-10-29
影响因子：
3.7
通讯作者：
Iwamoto, Mitsumasa
中科院分区：
文献类型：
--
作者：
Weis, Martin;Lin, Jack;Iwamoto, Mitsumasa
分析了有机场效应晶体管（OFET）的瞬态电流，并采用改进的飞行时间（TOF）法对并五苯OFET的载流子迁移率进行了计算。分析表明，在载流子到达漏极之前，位移电流开始上升，瞬态电流的拐点代表载流子在沟道中的输运时间。在具有不同沟道长度L的OFFEs上进行的TOF实验显示渡越时间与L-2（V-gs - V-th）成比例地增加，这表明界面电荷传播调节载流子输运。所得到的TOF迁移率与稳态FET迁移率具有良好的对应性。
The transient current generated from an organic field effect transistor (OFET) is analyzed, and the modified time-of-flight (TOF) method is employed for evaluating the carrier mobility of the pentacene OFET. Analysis shows that the displacement current rises up before carriers reach the drain, and the inflection points of the transient currents represent the transport time of carriers across the channel. TOF experiments performed on OFETs with various channel lengths L show an increase of the transit time in proportion to L-2(V-gs - V-th), suggesting that the interface charging propagation regulates the carrier transport. The obtained TOF mobility has good correspondence with the steady-state FET mobility.