Advances in AlGaInN laser diode technology for defence applications
Advances in AlGaInN laser diode technology for defence applications
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用于国防应用的 AlGaInN 激光二极管技术的进步
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
G. Targowski
中科院分区：
文献类型：
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作者：
S. Najda;P. Perlin;T. Suski;L. Marona;M. Boćkowski;M. Leszczynski;A. Kafar;S. Stanczyk;P. Wisniewski;R. Czernecki;R. Kucharski;G. Targowski
综述了AlGaInN半导体激光器技术的最新进展。AlGaInN材料系统允许在从u. v.到可见光的非常宽的波长范围内制造激光二极管，即，380- 530 nm，通过调节激光GaInN量子阱的铟含量。国防应用方面特别感兴趣的是用于水下电信和传感应用的蓝绿激光二极管技术。脊形波导半导体激光器结构在400- 420 nm波长范围内实现了单模工作，光功率<100 mW，可靠性高。低缺陷率和高度均匀的GaN衬底允许制造氮化物激光器的阵列和棒。此外，AlGaInN激光二极管的高功率操作被证明与单芯片的操作，“微型阵列”包括在408-412 nm波长范围内的功率高达2.5W CW的3条公共p接触和在功率超过4 W CW的16条公共p接触激光器阵列。
The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to the visible, i.e., 380-530nm, by tuning the indium content of the laser GaInN quantum well. Of specific interest for defence applications is blue-green laser diode technology for underwater telecommunications and sensing applications. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range with high reliability. Low defectivity and highly uniform GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition, high power operation of AlGaInN laser diodes is demonstrated with the operation of a single chip, ‘mini-array’ consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.