Measurement Back-Action in Stacked Graphene Quantum Dots
Measurement Back-Action in Stacked Graphene Quantum Dots
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DOI：
10.1021/acs.nanolett.5b02167
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发表时间：
2015-09-01
期刊：
影响因子：
10.8
通讯作者：
Ensslin, K.
中科院分区：
文献类型：
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作者：
Bischoff, D.;Eich, M.;Ensslin, K.
我们提出了一个在石墨烯中的电子输运实验，其中研究了量子点上的经典和量子力学电荷检测器反作用。该器件由两个堆叠的石墨烯量子点组成，它们被一层薄薄的氮化硼隔开。该器件通过货车德瓦尔斯堆叠制造，并配备有与两个点的单独的源极和漏极接触。通过对一个量子点施加有限的偏置，在另一个未偏置的量子点中感应出电流。我们提出了一个解释所观察到的测量感应电流的基础上强电容耦合和能量依赖的隧道势垒，打破了无偏系统中的空间对称性。这是石墨烯基量子器件的一个特殊功能。通过考虑高阶量子力学的反作用机制，可以理解经典禁止制度中的传输实验观察。
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher-order quantum mechanical back-action mechanisms.