TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode
TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode
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DOI：
10.1093/rpd/ncu369
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发表时间：
2015-12-01
影响因子：
1
通讯作者：
Duttagupta, Siddhartha P.
中科院分区：
文献类型：
--
作者：
Das, Achintya;Duttagupta, Siddhartha P.
在环境放射性污染、核废料管理、场地退役和去污等领域，对α光谱学的需求越来越大。硅基α粒子检测技术虽然成熟，但泄漏电流大、位移阈值低、辐射硬度等限制了探测器在恶劣环境下的运行。碳化硅（SiC）由于其高带隙、高位移阈值和高导热性而被认为是辐射探测应用的优良材料。本文提出了一种反偏置n型SiC肖特基二极管的α粒子诱导电子-空穴对生成模型，并利用计算机辅助设计（TCAD）仿真技术进行了验证。首先，研究了二极管的正偏I-V特性，确定了二极管的理想因数，并与已发表的实验数据进行了比较。在300 ~ 500 K的温度范围内，理想系数在1.4 ~ 1.7之间。接下来，利用离子在物质中的输运（TRIM）模拟对能量依赖的α粒子诱导的EHP产生模型参数进行优化。最后，对α粒子轰击产生的瞬态脉冲进行了分析(1)不同二极管温度（300-500 K），(2)不同入射α粒子能量（1-5 MeV），(3)不同4h - sic基肖特基二极管反向偏置电压（-50 ~ -250 V），(4)不同α粒子入射角（0°~ 70A°）。上述模型可以扩展到其他（宽带隙半导体）器件技术有用的辐射传感应用。
There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0A degrees aEuro"70A degrees).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application.