Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells
Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells
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DOI：
10.1088/0022-3727/35/7/306
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发表时间：
2002-04-07
影响因子：
3.4
通讯作者：
O'Donnell, KP
中科院分区：
文献类型：
--
作者：
Martin, RW;Edwards, PR;O'Donnell, KP
在本文中，我们描述了InGaN单量子阱的生长和特性，其发射峰分别为蓝、绿。琥珀色和红色光谱区，由金属-有机汽相外延生长。从860℃蓝光发射(峰值约430 nm)InGaN量子阱的生长开始，InGaN的生长温度逐渐降低。在低温下测得的光致发光峰值波长通过绿色和橙色光谱区域，在生长温度为760℃时达到670 nm。这对应于比当前接受的二元化合物Inn的带隙低的能量。讨论了发光峰的光谱特性。包括对声子辅助贡献的所有分析。低能二次离子质谱仪分析提供了有关“蓝”和“红”量子阱的铟含量和厚度的信息。结合计算结果，从InN-GaN偏析和强压电场效应的共同作用出发，讨论了“亚带隙”发光的起源。
In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green. amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak similar to430 nm) InGaN quantum well at 860degreesC the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760degreesC. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed. including all analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields.