Contralateral masking in cochlear implant users with residual hearing in the non-implanted ear
Contralateral masking in cochlear implant users with residual hearing in the non-implanted ear
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DOI：
10.1159/000046814
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发表时间：
2001-03-01
影响因子：
1.6
通讯作者：
Nicholas, AM
中科院分区：
文献类型：
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作者：
James, C;Blamey, P;Nicholas, AM
对非植入耳内有残余听力的人工耳蜗植入者的对侧掩蔽进行了研究。当电掩蔽器出现在另一只耳朵时，观察到声学探头的阈值升高。此外，当出现声学对侧掩蔽器时，观察到电探头的阈值升高。由对侧声学或电掩蔽器产生的以分贝电荷或分贝声压级表示的阈值偏移量在正常听众对类似刺激的范围内（即4-8 dB）。声学掩蔽器的感觉水平与观察到的最大掩蔽量之间存在相关性，这与正常听力受试者的数据一致。掩蔽图案的宽度与严重感音神经受损的耳朵和植入耳朵中的前向掩蔽图案的预期宽度相似。最大量的声掩蔽往往发生在比特征频率位置预期更基础的电极位置上。然而，在可以使用相对高频的 4kHz 掩蔽器的情况下，最大阈值升高的特征频率位置与掩蔽器的特征频率位置之间存在良好的匹配。版权所有 (C) 2001 S. Karger AG，巴塞尔。
Contralateral masking was investigated in cochlear implant users with residual hearing in the non-implanted ear. Threshold elevations for acoustic probes were observed when electrical maskers were presented in the opposite ear. Also, threshold elevations for electrical probes were observed when acoustic contralateral maskers were presented. The amount of threshold shift expressed in decibels charge or decibels sound pressure level produced by either contralateral acoustic or electric maskers was within the range found in normal listeners for similar stimuli (i.e. 4-8 dB). There was a correlation between the sensation level of acoustic maskers and the maximum amount of masking observed which is consistent with data for normally hearing subjects. The width of the masking patterns was similar to that expected from forward masking patterns in severely sensorineurally impaired ears and implanted ears. The maximum amount of acoustic masking tended to occur for electrode positions that were more basal than expected from characteristic frequency positions. However, where a relatively high-frequency 4-kHz masker could be used, there was a good match between the characteristic frequency position of the maximum threshold elevation and that of the masker. Copyright (C) 2001 S. Karger AG, Basel.