CMOS-compatible capacitive high temperature pressure sensors
CMOS-compatible capacitive high temperature pressure sensors
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DOI：
10.1016/s0924-4247(00)00385-x
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发表时间：
2000-08-25
影响因子：
4.6
通讯作者：
Mokwa, W
中科院分区：
文献类型：
--
作者：
Kasten, K;Amelung, J;Mokwa, W
提出了一种新型的表面微加工电容式单片高温压力传感器，该传感器采用氧注入分离（SIMOX）衬底。生产步骤是cmos兼容，并允许芯片上的高温读出电子集成。在50摄氏度到340摄氏度的温度范围内进行测量，三种不同类型的传感器在38、85和125巴的压力范围内进行了研究。在50℃~ 250℃的温度范围内，传感器的偏置温度系数（TCO）低于可测量精度。在250℃至340℃的温度范围内，由于封装的诱导应力，TCO降至- 5000ppm /℃。从封装中释放的传感器在整个温度范围内显示的最大TCO小于500 ppm/℃。(C) 2000 Elsevier Science S.A.版权所有
A new surface-micromachined capacitive single chip pressure sensor for high temperature applications using separation by implantation of oxygen (SIMOX) substrates is presented. The production steps are CMOS-compatible and allow on-chip integration of high temperature readout electronics. Measurements have been performed in a temperature range from 50 degrees C to 340 degrees C. Three different types of sensors have been investigated with a pressure range of 38, 85 and 125 bar. In the temperature range from 50 degrees C to 250 degrees C, the offset temperature coefficient (TCO) of the sensors is below the measurable accuracy. In the temperature range from 250 degrees C to 340 degrees C, the TCO falls off to - 5000 ppm/degrees C due to induced stress of the package. Sensors that are released from the package show a maximum TCO of less than 500 ppm/degrees C over the whole temperature range. (C) 2000 Elsevier Science S.A. All rights reserved.