High Speed Silicon optical modulators
High Speed Silicon optical modulators
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DOI：
10.1117/12.902767
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发表时间：
2011-11
期刊：
影响因子：
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通讯作者：
G. Reed;D. Thomson;F. Gardes;N. Emerson;J. Fédéli
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文献类型：
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作者：
G. Reed;D. Thomson;F. Gardes;N. Emerson;J. Fédéli
在这篇文章中，我们描述了两个硅基光学调制器，它们是萨里小组参与的两个项目的一部分，即由英国工程和物理科学研究理事会(EPSRC)资助的“英国硅光子学项目”和由欧盟资助的欧洲“HELIOS”项目。调制器利用了MZI结构中的载流子耗尽效应，但各有优缺点。一种具有接近偏振独立性的性能，而另一种表现出40 Gb/S硅调制器的非常高的消光比。两者的运行速度均为40 Gb/S。
In this paper we describe two silicon based optical modulators that have been fabricated as part of two projects in which the Surrey group is involved, the “UK Silicon Photonics project” funded by the UK Engineering and Physical Sciences Research Council (EPSRC), and the European “HELIOS” project funded by the European Union. The modulators exploit the carrier depletion effect in MZI structures, but have different advantages and disadvantages. One has a performance that is close to polarisation independence, whilst the other demonstrates a very high extinction ratio for a 40Gb/s silicon modulator. Both are shown to operate at 40Gb/s.