Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors
Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors
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用于高性能晶体管的钙钛矿氧化物上单晶二维半导体的晶圆级生长
DOI：
10.1021/acs.nanolett.9b00381
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Peng Hailin
中科院分区：
文献类型：
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作者：
Tan Congwei;Tang Min;Wu Jinxiong;Liu Yinan;Li Tianran;Liang Yan;Deng Bing;Tan Zhenjun;Tu Teng;Zhang Yichi;Liu Cong;Chen Jian-Hao;Wang Yong;Peng Hailin
新兴的二维（2D）半导体材料是下一代数字电子和光电子的有前途的替代品。然而，迄今为止合成的大规模二维半导体薄膜通常是多晶的，具有缺陷的晶界，这可能会降低其性能。在这里，首次在绝缘钙钛矿氧化物衬底[SrTiO3， LaAlO3, (La, Sr)(Al, Ta)O3]上实现了单晶Bi2O2Se薄膜的晶圆尺寸生长，这是一种具有高迁移率的新型空气稳定二维半导体。层状Bi2O2Se脱膜具有完美的晶格匹配和与钙钛矿氧化物衬底的强相互作用，可以实现多个种子的单向排列和无缝合并成无有害晶界的单晶连续薄膜。单晶Bi2O2Se薄膜在整个晶圆上表现出优异的空间均匀性，允许批量制造高性能场效应器件，在室温下具有高迁移率~ 150 cm2v - 1s - 1，具有优异的开关性能，具有大开/关比bbb105，在通道长度~ 5 μm处具有高驱动电流~ 45 μA μm - 1。我们的工作向高迁移率半导体二维层状材料的实际应用迈出了一步，并为研究新的物理现象提供了氧化物异质结构的替代平台。
Emerging two-dimensional (2D) semiconducting materials serve as promising alternatives for next-generation digital electronics and optoelectronics. However, large-scale 2D semiconductor films synthesized so far are typically polycrystalline with defective grain boundaries that could degrade their performance. Here, for the first time, wafer-size growth of a single-crystal Bi2O2Se film, which is a novel air-stable 2D semiconductor with high mobility, was achieved on insulating perovskite oxide substrates [SrTiO3, LaAlO3, (La, Sr)(Al, Ta)O3]. The layered Bi2O2Se epilayer exhibits perfect lattice matching and strong interaction with perovskite oxide substrates, which enable unidirectional alignment and seamless mergence of multiple seeds into single-crystal continuous films free of detrimental grain boundaries. The single-crystal Bi2O2Se thin films show excellent spatial homogeneity over the entire wafer and allow for the batch fabrication of high-performance field-effect devices with high mobilities of ∼150 cm2V–1s–1at room temperature, excellent switching behavior with large on/off ratio of >105, and high drive current of ∼45 μA μm–1at a channel length of ∼5 μm. Our work makes a step toward the practical applications of high-mobility semiconducting 2D layered materials and provides an alternative platform of oxide heterostructure to investigate novel physical phenomena.