SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield
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DOI：
10.1587/elex.16.20181135
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发表时间：
2019-02
期刊：
影响因子：
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通讯作者：
Bo Yi;Hao Hu;Jia Lin;Junji Cheng;Haimeng Huang;M. Kong
中科院分区：
文献类型：
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作者：
Bo Yi;Hao Hu;Jia Lin;Junji Cheng;Haimeng Huang;M. Kong
提出了一种新型SiC沟槽MOSFET（T-MOSFET）与侧壁肖特基二极管（SBD）集成的紧凑型功率器件。所提出的结构应用两个沟槽来分别在单个单元中形成n沟道和SBD。在蚀刻沟槽之后注入P+，以形成栅极氧化物和肖特基势垒的屏蔽。该器件的击穿电压比传统的集成SBD的沟槽MOSFET（CT-MOSFET）提高了363%。该T-MOSFET的集成SBD具有超低漏电流（1 μA/cm ~ 2）、低正向压降（Von_diode ≤ 0.9V）和低反向恢复电荷（Qrr = 0.73 μC/cm ~ 2）。
A new SiC trench MOSFET (T-MOSFET) integrated with a side-wall Schottky Barrier Diode (SBD) to form a compact power device is proposed. The proposed structure applies two trenches to form the n-channel and SBD in a single cell, respectively. A P+ is implanted after etching the trenches to form a shield for both the gate oxide and the Schottky barrier. The breakdown voltage of the proposed one is about 363% larger than that of the conventional trench MOSFET (CT-MOSFET) with integrated SBD. The integrated SBD of the proposed T-MOSFET exhibits an ultra-low leakage current (1 μA/cm2) and low forward voltage drop (Von_diode ≈ 0.9V), as well as low reverse recovery charge (Qrr = 0.73 μC/cm2).