PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
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DOI：
10.1103/physrev.94.42
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发表时间：
1954-01-01
期刊：
影响因子：
--
通讯作者：
SMITH, CS
中科院分区：
文献类型：
--
作者：
SMITH, CS
单轴拉伸引起n型和p型硅和锗的电阻率变化。实验测定了这些材料的完全张量压阻，并用电阻率压力系数和两个简单剪切系数表示。每种材料的一个剪切系数都非常大，不能用以前已知的机制来解释。讨论了C.Herring提出的一种可能的微观机制，它可以解释一个较大的剪切常数。这种所谓的电子转移效应出现在这些半导体的能带结构中，因此压阻可能给出关于这种结构的重要的直接实验信息。
Uniaxial tension causes a change of resistivity in silicon and germanium of both n and p types. The complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients. One of the shear coefficients for each of the materials is exceptionally large and cannot be explained in terms of previously known mechanisms. A possible microscopic mechanism proposed by C. Herring which could account for one large shear constant is discussed. This so called electron transfer effect arises in the structure of the energy bands of these semiconductors, and piezoresistance may therefore give important direct experimental information about this structure.